• English
  • Deutsch
  • Log In
    or
  • Research Outputs
  • Projects
  • Researchers
  • Institutes
  • Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. Analysis of EUV mask multilayer defect printing characteristics
 
  • Details
  • Full
Options
2012
  • Konferenzbeitrag

Titel

Analysis of EUV mask multilayer defect printing characteristics

Abstract
Defects below and inside multilayers of EUV masks belong to the most critical concerns for the application of EUV lithography in manufacturing processes. These defects are difficult to inspect and to repair. Moreover, they may print at different focus positions. The paper employs fully rigorous electromagnetic field simulations to investigate the printing characteristics of such defects under various process conditions. Selected simulation results are compared to experimental data. Additional simulations demonstrate possible defect repair strategies.
Author(s)
Erdmann, A.
Evanschitzky, P.
Bret, T.
Jonckheerec, R.
Hauptwerk
Extreme Ultraviolet (EUV) Lithography III
Konferenz
Conference "Extreme Ultraviolet (EUV) Lithography" 2012
Thumbnail Image
DOI
10.1117/12.916411
Language
Englisch
google-scholar
IISB
  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Send Feedback
© 2022