Analysis of EUV mask multilayer defect printing characteristics

Defects below and inside multilayers of EUV masks belong to the most critical concerns for the application of EUV lithography in manufacturing processes. These defects are difficult to inspect and to repair. Moreover, they may print at different focus positions. The paper employs fully rigorous electromagnetic field simulations to investigate the printing characteristics of such defects under various process conditions. Selected simulation results are compared to experimental data. Additional simulations demonstrate possible defect repair strategies.