Self-heating effects in nano-scaled MOSFETs and thermal aware compact models

Self-heating of MOSFETs scaled according to ITRS specifications for the years 2010 to 2019 is investigated using numerical TCAD simulations. The local warming-up due to self-heating in SOI based transistors can exceed 100 K and must be considered in IC design. For this purpose, compact models (BSIM3SOI and BSIM4SOI) accounting for self-heating effect were extracted for SOI-MOSFETs from the results of numerical TCAD simulations.