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2011
  • Konferenzbeitrag

Titel

Compensation of mask induced aberrations by projector wavefront control

Abstract
Rigorous simulation of light diffraction from optical and EUV masks predicts phase effects with an aberration like impact on the imaging performance of lithographic projection systems. This paper demonstrates the application of advanced modeling and optimization methods for the compensation of mask induced aberration effects. It is shown that proper adjustment of the wavefront results in significant reduction of best focus differences between different features.
Author(s)
Evanschitzky, Peter
Shao, Feng
Fühner, Tim
Erdmann, Andreas
Hauptwerk
Optical microlithography XXIV. Vol.2
Konferenz
Conference "Optical Microlithography" 2011
DOI
10.1117/12.879207
File(s)
002.pdf (681.84 KB)
Language
Englisch
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IISB
Tags
  • lithography simulatio...

  • mask topography effec...

  • wavefront aberrations...

  • process optimization

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