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  4. Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
 
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2011
Poster
Title

Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes

Title Supplement
Poster at SPIE Photomask Technology, September, Monterey, California
Author(s)
Rudolph, Oliver
Evanschitzky, Peter  
Erdmann, Andreas  
Bär, Eberhard  orcid-logo
Lorenz, Jürgen  
Conference
Conference "Photomask Technology" 2011  
DOI
10.24406/publica-fhg-373005
File(s)
001.pdf (11.3 MB)
Rights
Under Copyright
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • phase-shift photomask

  • rigorous electro-magnetic field (EMF) simulation

  • waveguide

  • line-edge roughness (LER)

  • line-width roughness (LWR)

  • CD variation

  • aerial image contrast

  • process window

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