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  4. Finite element modeling and raman study of strain distribution in patterned device islands on strained silicon-on-insulator (sSOI) substrates
 
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2011
Conference Paper
Title

Finite element modeling and raman study of strain distribution in patterned device islands on strained silicon-on-insulator (sSOI) substrates

Author(s)
Gu, D.
Baumgart, H.
Naumann, F.
Petzold, M.
Mainwork
218th ECS meeting abstracts 2010. Vol.3  
Conference
Electrochemical Society (Meeting) 2010  
Language
English
Fraunhofer-Institut für Werkstoffmechanik IWM  
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