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  4. Mask-topography-induced phase effects and wave aberrations in optical and extreme ultraviolet lithography
 
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2010
  • Konferenzbeitrag

Titel

Mask-topography-induced phase effects and wave aberrations in optical and extreme ultraviolet lithography

Abstract
Rigorous electromagnetic field simulations are applied to investigate phase effects in the light diffraction from masks for advanced optical and extreme ultraviolet lithography. Analogies of these phase effects with wave aberrations of the projection lens and their impact on the lithographic process performance are discussed.
Author(s)
Erdmann, A.
Shao, F.
Evanschitzky, P.
Fühner, T.
Hauptwerk
54th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, EIPBN 2010. Papers
Konferenz
International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN) 2010
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DOI
10.1116/1.3497024
Language
Englisch
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