Mask and wafer topography effects in optical and EUV-lithography
Abstract
The detailed understanding and accurate modeling of light diffraction from (sub-) wavelength size features on lithographic masks and wafers becomes indispensable for the development and optimization of advanced lithographic processes. This is demonstrated by two examples: optical proximity correction (OPC) for optical/EUV masks and wafer topography induced line width variations in double patterning.
