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  4. Acid diffusion effects between resists in freezing processes used for contact hole patterning
 
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2010
Conference Paper
Title

Acid diffusion effects between resists in freezing processes used for contact hole patterning

Abstract
Double patterning following an litho-litho-etch scheme is a possible option to create structure widths below the nominal resolution of optical light with current exposure technology. Interactions between the first and second resist layers may influence the final structure created. In this paper, we perform a model based investigation of the possible consequences of the diffusion of photo-generated acid from the second resist to the first one. As a consequence, less acid is available for the deprotection reaction, and we observe a tendency to an increase of the CD values of the primary structure. We attempt to explain observed footing effects in contact holes by this effect.
Author(s)
Fuhrmann, J.
Fiebach, A.
Erdmann, A.  
Trefonas, P.
Mainwork
The 35th International Conference on Micro- and Nano-Engineering, MNE 2009  
Conference
International Conference on Micro and Nano Engineering (MNE 2009) 2009  
Open Access
DOI
10.1016/j.mee.2009.11.150
Additional full text version
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Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • double patterning

  • post exposure bake

  • 3D simulation

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