Comparison between 65nm bulk and PD-SOI MOSFETs. Si/BOX interface effect on point defects and doping profiles

In this work, the influence of the silicon/Buried OXide interface (Si/BOX) on the electrical characteristics of Silicon-On-Insulator (SOI) MOSFETs is investigated by means of numerical simulations. Considering the state-of-the-art dopant diffusion models and the effect of Si/BOX interface as a point defect sink, process simulations were performed to investigate the two-dimensional diffusion behaviour of the dopant impurities. The impact of the Si/BOX interface on the shape of the different active zones profiles was investigated by analyzing the standard electrical characteristics of CMOS devices. Finally, a new electrical characterization methodology is detailed to better analyze dopants lateral diffusion profiles.