2009
Conference Paper
Title

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

Abstract
In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.
Author(s)
Lanza, M.
Porti, M.
Nafria, M.
Aymerich, X.
Benstetter, G.
Lodermeier, E.
Ranzinger, H.
Jaschke, G.
Teichert, S.
Wilde, L.
Michalowski, P.
Mainwork
Conference
DOI
Language
English