Low temperature silicon nitride films deposited on 3D topography by hot wire chemical vapor deposition (HWCVD)

Silicon nitride films were deposited by hot-wire chemical vapor deposition processes (HW-CVD). The films reveal a morphological structure very similar to nitrides formed in low pressure CVD (LP-CVD) or plasma enhanced CVD (PE-CVD) processes. The electrical breakdown voltages, however, are much smaller for HW- than PE- or LPCVD films. The deposition in holes for isolation purpose in "through silicon vias" (TSV) was investigated. The integration with optical devices require very low temperatures (<200°C). Dielectric layers formed at these temperatures show sufficiently good properties for the planned applications.