• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. Piezoresistive effect in DLC films and silicon
 
  • Details
  • Full
Options
2007
Conference Paper
Title

Piezoresistive effect in DLC films and silicon

Abstract
Hydrogenated amorphous diamond-like carbon (DLC, a-C:H) films were integrated in silicon boss membrane as a strain gauge material. The films were deposited at a bias voltage of -800 V by plasma-assisted chemical vapour deposition (PACVD). The a-C:H film with a 12-13 % of hydrogen showed hardness of 23 GPa. The film has around 24 % of sp3 content. The I-V characteristic is found to be Ohmic and the film has activation energy of around 0.32 eV. High gauge factor (K) values in the range of 16-36 were obtained, which were found to be independent of longitudinal and transversal strain configurations, current injection direction and of temperature in the range of 22-45 °C. P-diffused strain gauges using Borofilm 100 were also integrated in the boss membrane. High sensitivities in the range of 0.33-0.63 mV/V/mN were obtained, when vertical load was applied on the boss membrane.
Author(s)
Tibrewala, A.
Phataralaoha, A.
Peiner, E.
Bandorf, R.
Büttgenbach, S.
Mainwork
NSTI Nanotechnology Conference and Trade Show. NSTI Nanotech 2007. Vol.3  
Conference
Nanotechnology Conference and Trade Show (Nanotech) 2007  
Language
English
Fraunhofer-Institut für Schicht- und Oberflächentechnik IST  
  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024