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Thermal stability of thin ALD ZrO2 layers as dielectrics in deep trench DRAM devices annealed in N2 and NH3
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2007
Poster
Title
Thermal stability of thin ALD ZrO2 layers as dielectrics in deep trench DRAM devices annealed in N2 and NH3
Title Supplement
Poster at E-MRS Fall Meeting, September 17-21 2007, Warsaw
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Author(s)
Weinreich, W.
Lemberger, M.
Erben, E.
Heitmann, J.
Wilde, L.
Ignatova, V.A.
Teichert, S.
Schröder, U.
Oberbeck, L.
Bauer, A.J.
Ryssel, H.
Kücher, P.
Conference
European Materials Research Society (Fall Meeting) 2007
DOI
10.24406/publica-fhg-357206
File(s)
001.pdf (5.33 MB)
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Rights
Under Copyright
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB