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  4. Thermal stability of thin ALD ZrO2 layers as dielectrics in deep trench DRAM devices annealed in N2 and NH3
 
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2007
Poster
Title

Thermal stability of thin ALD ZrO2 layers as dielectrics in deep trench DRAM devices annealed in N2 and NH3

Title Supplement
Poster at E-MRS Fall Meeting, September 17-21 2007, Warsaw
Author(s)
Weinreich, W.
Lemberger, M.
Erben, E.
Heitmann, J.
Wilde, L.
Ignatova, V.A.
Teichert, S.
Schröder, U.
Oberbeck, L.
Bauer, A.J.
Ryssel, H.
Kücher, P.
Conference
European Materials Research Society (Fall Meeting) 2007  
File(s)
Download (5.33 MB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-357206
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
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