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  4. Process-induced diffusion phenomena in advanced CMOS technologies
 
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2006
Conference Paper
Title

Process-induced diffusion phenomena in advanced CMOS technologies

Other Title
Prozessbedingte Diffusionsphänomene in fortschrittlichen CMOS Technologien
Abstract
The continuous scaling of electron devices places strong demands on device design and simulation. The currently prevailing bulk transistors as well as future designs based on thin silicon layers all require a tight control of the dopant distribution. For process simulation, especially the correct prediction of boron diffusion and activation was always a problem. The paper describes the model developed for boron implanted into crystalline silicon and shows applications to hot-shield annealing and flash-assisted rapid thermal processing.
Author(s)
Pichler, P.  orcid-logo
Burenkov, A.  
Lerch, W.
Lorenz, J.  
Paul, S.
Niess, J.
Nényei, Z.
Gelpey, J.
McCoy, S.
Windl, W.
Giles, L.F.
Mainwork
2nd International Conference on Diffusion in Solids and Liquids, DSL 2006  
Conference
International Conference on Diffusion in Solids and Liquids (DSL) 2006  
Open Access
DOI
10.4028/3-908451-36-1.510
Additional full text version
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Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • CMOS technology

  • transient diffusion

  • transient activation

  • pattern effect

  • hot-shield annealing

  • flash annealing

  • numerical modeling

  • process simulation

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