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  4. A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology
 
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2005
Conference Paper
Title

A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology

Other Title
Ein balancierter Verdoppler MMIC für 150 bis 220 GHz basierend auf einer metamorphen HEMT-Technologie mit einer Gatelänge von 50 nm
Abstract
A coplanar millimeter wave doubler MMIC covering the entire G-Band was developed. Based on a 50 nm metamorphic HEMT technology, the circuit demonstrates an output power of more than -12 dBm between 150- and 220 GHz for an input power of 0 dBm. By increasing the input power to 12 dBm an output power exceeding 0 dBm was obtained in the frequency range between 180- and 220 GHz. Good fundamental rejection was ensured by using a Marchand Balun for balancing the design. The doubler was also used to provide the LO signal for a 170 to 200 GHz resistive FET mixer, yielding a conversion loss of 10 dB.
Author(s)
Schwörer, C.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Campos-Roca, Y.
Leuther, Arnulf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Tessmann, Axel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Seelmann-Eggebert, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Massler, Hermann
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schlechtweg, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Weimann, G.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
European Microwave Week 2005. CD-ROM  
Conference
European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) 2005  
Open Access
DOI
10.1109/EUMC.2005.1610238
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • balanced doubler

  • balancierter Doppler

  • MMIC

  • G-Band

  • Balun

  • resistive mixer

  • resistiver Mischer

  • metamorphic

  • metamorph

  • HEMT

  • coplanar waveguide

  • Koplanarleitung

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