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  4. High-sensitivity, high-dynamic range 768 × 576 pixel CMOS image sensor
 
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2004
Conference Paper
Title

High-sensitivity, high-dynamic range 768 × 576 pixel CMOS image sensor

Abstract
This communication describes a high-sensitivity, high dynamic range 768 × 576 pixel image sensor fabricated in 0.5m standard CMOS technology and its design. The pixel pitch is 10m x 10m with a fill factor of 50% while the chip area is 90mm2. The dynamic range is 118dB while the measured noise equivalent exposure is 66pJ/cm2 at 635 nm wavelength. This yields a sensitivity of just 4.9mlx at 20ms integration time which makes it also suitable for night vision applications.
Author(s)
Brockherde, W.
Bußmann, A.
Nitta, C.
Hosticka, B.J.
Wertheimer, R.
Mainwork
Proceeding of the 30th European Solid-State Circuits Conference, ESSCIRC 2004  
Conference
European Solid State Circuits Conference (ESSCIRC) 2004  
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
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