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  4. Three-dimensional simulation of ionized metal plasma vapor deposition
 
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2004
Conference Paper
Title

Three-dimensional simulation of ionized metal plasma vapor deposition

Other Title
Dreidimensionale Simulation der ionisierten Metall-Plasma-Abscheidung
Abstract
A physically based model for full three-dimensional(3D)feature-scale simulation of ionized metal plasma (IMP) deposition has been implemented. It assumes a dynamical equilibrium of particle fluxes where the sum of delivering (positive ) and consuming (negative) fluxes is zero. This allows to calculate the de position rates of metal at the different positions on the feature surface. The simulator is validated by considering the quasi-2D case of a long trench and comparing the results with data from the literature. Vias are investigated by compar ing the profiles to the results for long trenches. Finally, the application to 3D structures without any symmetry is shown.
Author(s)
Kistler, S.
Bär, E.  orcid-logo
Lorenz, J.  
Ryssel, H.
Mainwork
Materials for advanced metallization  
Conference
European Workshop on Materials for Advanced Metallization (MAM) 2004  
DOI
10.1016/j.mee.2004.07.021
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • ionized metal plasma deposition

  • semiconductor process simulation

  • three-dimensional topography simulation

  • ionisierte Metall-Plasma-Abscheidung

  • Halbleiter-Prozess-Simulation

  • dreidimiensionale Topographie-Simulation

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