On the role of corner effect in FinFETs

The corner effect which is known as a leakage current crowding at the edges of the active areas in the shallow trench isolated MOS transistors is investigated in FINFET transistors using three-dimensional simulation. In contrast to conventional trench isolated MOS transistors, the corner effect in FinFETs leads to a depletion of the leakage currents in the corners of the active area and does not deteriorate the transistor performance.