Options
2002
Conference Paper
Titel
Three-dimensional simulation of the channel stop implant effects in sub-quarter micron PMOS transistors
Alternative
Dreidimensionale Simulation der Wirkung der Kanalstopimplantation in Subviertelmikrometer-PMOS-Transistoren
Abstract
The possibility to suppress the narrow channel effect due to the crowding of the leakage current near the edge of the active area in sub-quarter micrometer MOS transistors by means of a special channel stop implant has been investigated using coupled three-dimensional process and device simulation. Optimum ion implantation conditions for the suppression of the parasitic current crowding in a 0.16 µm PMOS transistor with an arsenic doped channel were found.
Language
English
Tags
-
CMOS
-
3D-simulation
-
implantation
-
doping distribution
-
shallow trench isolation
-
STI
-
small size CMOS transistor
-
MOSFET
-
PMOS transistor 3D simulation
-
channel stop implant effect
-
narrow channel effect suppression
-
active area edge leakage current crowding
-
MOS Transistor
-
coupled 3D process/device simulation
-
optimum ion implantation condition
-
parasitic current crowding suppression
-
arsenic doped channel