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  4. Three-dimensional triangle-based simulation of etching processes
 
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2002
Conference Paper
Title

Three-dimensional triangle-based simulation of etching processes

Other Title
Dreidimensionale dreiecksbasierte Simulation von Ätzprozessen
Abstract
A software module for the three-dimensional simulation of etching processes has been developed. It works on multilayer structures given as triangulated surface meshes. The mesh is moved nodewise according to rates which in this work have been determined from isotropic and anisotropic components. An important feature of the algorithm is the automatic detection of triple lines along mask edges and the refinement of triangles at these triple lines. This allows for the simulation of underetching. The capabilities of the algorithm are demonstrated by examples such as the simulation of glass etching for the fabrication of a phase shift mask for optical lithography and the etching of an STI trench structure.
Author(s)
Lenhart, O.
Bär, E.  orcid-logo
Mainwork
Simulation of Semiconductor Processes and Devices. SISPAD 2002  
Conference
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2002  
DOI
10.1109/SISPAD.2002.1034533
Language
English
IIS-B  
Keyword(s)
  • process simulation

  • etching

  • 3D string algorithm

  • surface meshing

  • Prozeßsimulation

  • Ätzen

  • 3D-String-Algorithmus

  • Oberflächengitter

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