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2000
Conference Paper
Titel
InP photoreceiver OEICs for high-speed optical transmission systems
Abstract
Photoreceivers based on InP are becoming increasingly important for 40 Gbit/s telecommunication systems operating at the wavelength of 1.55 mu m. Due to the monolithic integration, they are advantageous in respect of high-speed performance, small size and cost saving in high-frequency packaging. Research groups worldwide are engaged in developing such OEIC's, with varying architectures and types of the components. Our broadband photoreceiver OEIC consists of a waveguide-integrated GaInAs p-i-n photodetector and a distributed amplifier. The 5*20 mu m sized photodetectors, with a responsivity of 0.4 A/W, reveal a 3 dB cut-off frequency of 70 GHz. The electrical distributed amplifier is made of our high-electron mobility transistors. The HEMT devices with gate lengths of 0.25 mu m exhibit cut-off frequencies fT and fmax of up to 100 and 250 GHz, respectively. The integrated photoreceivers are characterized on-after using a heterodyne-measurement setup and finally packaged into modules for system experiments. On recently fabricated wafers, the receivers show a bandwidth of 40 GHz, whereas the amplifiers alone even exhibit values as high as 43 GHz, with gain ripple less than 1 dB.
Language
English
Tags
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distributed amplifiers
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HEMT integrated circuits
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iii-v semiconductors
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indium compounds
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integrated circuit packaging
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integrated optoelectronics
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modules
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optical receivers
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p-i-n photodiodes
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photodetectors
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InP photoreceiver oeics
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high-speed optical transmission systems
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Gbit/s telecommunication systems
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monolithic integration
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high-speed performance
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small size
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broadband photoreceiver oeic
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waveguide-integrated gainAs p-i-n photodetector
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distributed amplifier
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high-electron mobility transistors
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heterodyne-measurement setup
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packaged
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gain ripple
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40 Gbit/s
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1.55 mum
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0.25 mum
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100 GHz
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250 GHz
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40 GHz
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inp