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2000
Conference Paper
Titel
Impact of a conducting interface layer on the characteristics of integrated InP photoreceivers
Abstract
High-speed photoreceivers are important components for future high-bit rate communication systems. The use of a monolithical integration of waveguide, photodiode and amplifier avoids loss-making interconnections and enables high-speed performance, small size and cost-saving high-frequency packaging. Particularly with respect to a commercial use, the degree of reproducibility and reliability has to be very high. The elimination of process uncertainties is indispensable. Hence, in our photoreceiver development, e.g. the semi-insulating behavior of the substrate and the waveguide layer stack is verified as a matter of routine. By these measurements an occasionally occurring interface conduction was detected. This affects adversely the device insulation of the photoreceiver elements. On the performance side especially the high-frequency gain of the integrated amplifiers is reduced. To stabilize the fabrication process, a new treatment prior to epitaxial growth was developed to ensure a complete and reliable semi-insulating behaviour.
Tags
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high-speed optical techniques
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iii-v semiconductors
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indium compounds
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integrated optoelectronics
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optical receivers
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photodetectors
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photodiodes
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conducting interface layer
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integrated InP photoreceivers
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high-speed photoreceivers
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monolithic integration
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waveguide layer stack
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interface conduction
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photoreceiver elements
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high-frequency gain
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integrated amplifiers
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fabrication process
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epitaxial growth
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waveguide
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photodiode
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amplifier
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inp