Extraction of vacancy parameters from outdiffusion of zinc from silicon

A final determination of the equilibrium concentrations and diffusion coefficients of intrinsic point defects has been the goal of various investigations since decades. In a series of papers, Giese et al. claimed that outdiffusion of zinc at a temperature of 1107 °C can be explained only by a vacancy equilibrium concentration of the order of 1E15 cm-3. The assumption of such a high equilibrium concentration has a long tradition. However, it is in contrast to models for crystal growth and some of our results on platinum diffusion. A numerical investigation based on the zinc-outdiffusion profiles of Giese et al. resulted in the conclusion that these profiles can be explained also by significantly lower vacancy equilibrium concentrations.