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  4. Integrated three-dimensional topography simulation of contact hole processing
 
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1997
Conference Paper
Title

Integrated three-dimensional topography simulation of contact hole processing

Other Title
Integrierte dreidimensionale Topographiesimulation von Kontaktlochprozessierung
Abstract
A software package for the three-dimensional simulation of topography processes which has been developed within the European project PROMPT is described. The software is capable of simulating lithography, dry-etching and layer deposition processes. The individual modules have been integrated into a unified environment, thus allowing simulation of complete topography process sequences. As an example, a complete simulation consisting of lithography, dry-etching, and sputter deposition steps to open and fill a contact hole is shown. The simulation result is in good agreement with the experiment, i.e. a scanning electron microscopy image of the contact hole cross section.
Author(s)
Bär, E.
Benvenuti, A.
Henke, W.
Jünemann, B.
Kalus, C.
Niedermaier, P.
Lorenz, J.
Mainwork
ULSI science and technology 1997. Proceedings of the Sixth International Symposium on Ultra Large Scale Integration Science and Technology  
Conference
International Symposium on Ultra Large Scale Integration (ULSI) Science and Technology 1997  
Language
English
IIS-B  
Fraunhofer-Institut für Siliziumtechnologie ISIT  
Keyword(s)
  • Ätzen

  • contact hole

  • deposition

  • etching

  • Halbleitertechnologie

  • Kontaktloch

  • Lithographie

  • lithography

  • process simulation

  • Prozeßsimulation

  • Schichtabscheidung

  • semiconductor technology

  • Topographiesimulation

  • topography simulation

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