Direct extraction of non-linear intrinsic transistor behaviour form large signal waveform measurement data

Based on a vector corrected large signal RF waveform measurement system, analysis techniques have been developed that allow for the direct determination of the intrinsic dynamic I-V and gate diode characteristics. A key feature of these analysis techniques is that the analysis is performed directly on measured waveform data without using any non-linear model in advance, as in previous works. Investigations have shown that the gate diode characteristic extracted under RF operation conditions is in close agreement with the corresponding DC measurement. In contrast to that, the determined dynamic output characteristic shows significant differences to the measured DC I-V curves. To verify the capability of the extracted characteristics in the area of non-linear modelling they are directly used for the parameter extraction of the intrinsic current sources of an analytical large signal transistor model. A good agreement between the simulated and measured large signal behaviour of a 2x150 mu m wide MODFET at different excitation frequencies up to 10 GHz was achieved.