3D Simulation of Low Pressure Chemical Vapor Deposition

A new method for the three-dimensional (3D) simulation of LPCVD using a modified string algorithm combined with a redistribution model is presented. Simulation results for rectangular holes are shown. The step coverage predicted by 3D simulations is compared to step coverages from 2D simulations. It is shown that the considerable differences observed require the use of 3D algorithms for the simulation of LPCVD in deep submicron devices.