Enhanced diffusion of antimony caused by phosphorus diffusion at high concentrations

The influence of high-concentration phosphorus diffusion on an antimony marker layer separated spatially by 4 micrometres epitaxially deposited silicon is described. The phosphorus was implanted into a deposited polysilicon layer to eliminate the effects of implantation enhanced diffusion and point-defect generation due to phosphorus precipitation on the diffusion of the antimony marker layer. It was found that the diffusion of the antimony marker layer is already reduced by the epi-layer and, for the first time, that phosphorus diffusion enhances the diffusion of antimony.