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  4. Electro-optic modulation by electron transfer in MOVPE grown InGaAsP/InP multiple quantum well structures
 
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1991
Conference Paper
Titel

Electro-optic modulation by electron transfer in MOVPE grown InGaAsP/InP multiple quantum well structures
Abstract
The authors demonstrate for the first time electro-optic modulation due to voltage controlled phase space filling by electron transfer in modulation doped MOVPE grown InGaAsP/InP multiple quantum well structures.
Author(s)
Agrawal, N.
Hoffmann, D.
Franke, D.
Li, K.C.
Clemens, U.
Witt, A.
Wegener, M.
Hauptwerk
IOOC-ECOC '91. 17th European Conference on Optical Communication ECOC '91. 8th International Conference on Integrated Optics and Optical Fibre Communication IOOC '91. Vol.3
Konferenz
European Conference on Optical Communication (ECOC) 1991
International Conference on Integrated Optics and Optical Fibre Communication (IOOC) 1991
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Language
English
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Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI
Tags

  • electro-optical devic...

  • gallium arsenide

  • gallium compound

  • iii-v semiconductor

  • indium compounds

  • integrated optic

  • optical modulation

  • semiconductor growth

  • semiconductor quantum...

  • vapour phase epitaxia...

  • mqw semiconductor

  • sq well

  • optical switch

  • electron transfer

  • movpe grown

  • multiple quantum well...

  • electro-optic modulat...

  • voltage controlled ph...

  • modulation doped

  • InGaAsP-InP
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