Substrate damage free laser recrystallization of polysilicon
Abstract
Recrystallization of a polysilicon layer on insulator by means of an Ar laser beam is reported on. Attention is paid to material properties of the upper layer and the substrate. With careful choice of the process parameters, a high-quality upper layer can be obtained, whereas the substrate retains its original quality. Measurements on devices fabricated in both levels support this conclusion.
