Programs for VLSI process simulation

In contrast to the early times of simulation where the tools were dedicated either to the simulation of the doping processes ion implantation, diffusion and oxidation in ld, or of changes in topography caused by metallization, lithography and etching, today's application in the development of VLSI devices demands integrated programs which are able to simulate complete sequences of both doping and topography processes in at least two dimensions. The program COMPOSITE (Complete Modeling Program of Silicon Technology) was the first one available to simulate these process sequences in two dimensions and to transfer the results to device modelling programs to allow the electrical chararcterization of the device simulated. In this paper, the present status of COMPOSITE is described.