The influence of point defect concentration on the diffusion of gold in silicon

The diffusion of gold in silicon is described by the kick-out and dissociative mechanism. The resulting set of four coupled partial differential equations is completely solved numerically. Splitting the self-diffusion coefficients, we find that the gold is strongly influenced by the equilibrium concentrations of point-defects. As a result of our work, we can give an upper boundary for the value of the equilibrium concentrations of vacancies and a lower boundary for the diffusivity of vacancies.