Avoidance of substrate damage upon laser recrystallization of an SOI layer
Substrate damage (SD) induced by laser recrystallization of a poly-Si layer insulated from a (100) Si substrate by a SiO2 layer is discussed. The different kinds of SD are briefly reviewed. Measures to prevent SD are presented and discussed. Their effectiveness is proven by the fact that after argon laser recrystallization of an SOI layer, substrate NMOS devices showed no change in their characteristics.