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  4. Simultaneous fabrication of very low resistance ohmic contacts to n-InP and p-InGaAs
 
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1987
Conference Paper
Titel

Simultaneous fabrication of very low resistance ohmic contacts to n-InP and p-InGaAs

Abstract
A process to simultaneously form high-quality ohmic contacts to n-InP and p-InGaAs has been developed. Ti-Au metallization was applied to n-InP following an Ar+-sputter etching treatment and to p-InGaAs after Zn diffusion from doped spin-on glass. Utilizing a selective-wet etching step for the p-type material permits simultaneous fabrication of these contacts with specific contact resistances of well below 1*10-6 Omega cm2.
Author(s)
Kaumanns, R.
Grote, N.
Bach, H.-G.
Fidorra, F.
Hauptwerk
Gallium arsenide and related compounds 1987. Proceedings
Konferenz
International Symposium on Gallium Arsenide and Related Compounds 1987
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Language
English
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Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI
Tags
  • diffusion in solids

  • etching

  • gallium arsenide

  • gold

  • iii-v semiconductors

  • indium compounds

  • metallisation

  • ohmic contacts

  • semiconductor-metal b...

  • titanium

  • zinc

  • semiconducting materi...

  • n-type material

  • metallization

  • ar+-sputter etching t...

  • diffusion

  • doped spin-on glass

  • selective-wet etching...

  • p-type material

  • simultaneous fabricat...

  • specific contact resi...

  • Zn

  • Ti-Au-InP

  • Ti-Au-InGaAs

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