Characterization of Gallium arsenide substrates and active layers

A survey of material characterization techniques used to support and to control the fabrication of GaAs microelectronic devices is presented. The evaluation of semiinsulating substrates and of active layers is emphasized. Particular attention is given to those measurements that allow nondestructive and topographic characterization. Various correlations between properties of starting materials, results of fabrication processes and the final device performance are discussed. (IAF)