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Channeling of Si during implantation into GaAs for MESFETs
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1988
Conference Paper
Titel
Channeling of Si during implantation into GaAs for MESFETs
Alternative
Channeling von Si bei der Implantation in GaAs für die Herstellung von MESFETs
Author(s)
Bachem, K.H.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Hornung, J.
Maier, M.
Hauptwerk
Secondary Ion Mass Spectrometry. SIMS VI
Konferenz
International Conference on Secondary Ion Mass Spectrometry 1987
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
GaAs
implantation
Ionen Channeling
SIMS
