Verbindungsnetzwerk zwischen Halbleiterstrukturen

(A1) Verbindungsnetzwerk sowie Verfahren zur Signaluebertragung zwischen Halbleiterstrukturen, bei welchem ein Signal einer ersten Halbleiterstruktur einer Sendeeinrichtung (S1, G1, D1) zugefuehrt wird, welche aus dem Signal eine Plasmonenwelle erzeugt und diese in einen Wellenleiter (G3) einkoppelt. Die auf dem Wellenleiter gefuehrten Plasmonen werden von einer Empfangseinrichtung (S2, G2, D2) empfangen und an eine zweite Halbleiterstruktur weitergegeben. Als Sender und/oder Empfaenger wird mindestens ein MOS-Transistor verwendet, in dessen Kanal die modulierte Plasmonenwelle erzeugt und/oder empfangen wird.

DE 102006061586 A1 UPAB: 20080729 NOVELTY - The connecting network is made of a wave guide for transmitting a signal between the semiconductor structures. A transmission device is provided for receiving a signal of a semiconductor structure and signal injection into the wave guide. A receiving device is provided for receiving the signal from the wave guide and passing on to another semiconductor structure. The transmission and receiving device have a metal oxide semiconductor transistor. The wave guide is formed by a boundary layer between a metal layer and a semiconductor or a metal layer and an insulator that has an oxide. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for signal transmission between two semiconductor structure, which conveys a signal of a semiconductor structure to a transmission device. USE - Connecting network for use on integrated circuits, around data or clock pulses and between different semiconductor structures (Claimed). ADVANTAGE - The connecting network is made of a wave guide for transmitting a signal between the semiconductor structures, having transmission and receiving device with a metal oxide semiconductor transistor, and hence enables to transfer electrical signals of a semiconductor structure to another semiconductor structure without transformation of an electrical signal into an optical signal.