Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung

(A1) Die Erfindung betrifft ein Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten sowie derart hergestellte dotierte und oxidierte Halbleitersubstrate. Weiterhin betrifft die Erfindung die Verwendung dieses Verfahrens zur Herstellung von Solarzellen.

WO 2008028625 A2 UPAB: 20080417 NOVELTY - The method involves coating a surface area of a semiconductor substrate with a layer (3) of doping material, which comprises amorphous silicon, silicon dioxide, silicon carbide, silicon nitride, aluminium oxide, titanium dioxide, tantalum oxide, dielectric materials, ceramic materials, materials containing organic compounds. Diffusion of the doping material takes place in the volume of the substrate by a thermal treatment of the semiconductor material in an oxidizing atmosphere. The surface area of the substrate, which is not coated with doping material, is oxidized. DETAILED DESCRIPTION - An independent claim is also included for a doped and oxidized semiconductor substrate. USE - Method for use in producing solar cells (Claimed). Can also be used in simultaneously doping and oxidizing semiconductor substrates.