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Patent
Title
Dotiergermisch fuer die Dotierung von Halbleitern
Other Title
Doping mixture for preparing and doping semiconductor surfaces, comprises a p- or n-dopant, for doping the semiconductor surfaces, water and mixture of two or more surfactants, where one of the surfactant is a non-ionic surfactant.
Abstract
Die Erfindung betrifft ein Dotiergemisch fuer die Beschichtung von Halbleitersubstraten, die anschliessend einer Hochtemperaturbehandlung zur Bildung einer dotierten Schicht zugefuehrt werden. Die Erfindung betrifft weiterhin ein Verfahren zur Herstellung eines derartigen Dotiergemisches sowie dessen Verwendung.
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DE1005025933 B UPAB: 20060727 NOVELTY - Doping mixture (A), for semiconductor doping, comprises at least one p- or n-dopant, for doping a semiconductor surface, water and mixture of two or more surfactants, where at least one of the surfactant is a non-ionic surfactant. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a semiconductor surface provided with (A); and (2) a method for doping a semiconductor comprising providing (A) and subsequently handling the semiconductor at increased temperature. USE - (A) is useful for preparing and doping semiconductor surfaces (claimed). ADVANTAGE - The doping of the semiconductor surfaces using (I) is simple and fast.
Inventor(s)
Link to:
Patent Number
102005025933
Publication Date
2006
Language
German