Verfahren zur Herstellung von duennen Schichten aus Hafniumdioxid
Date Issued
1993
Author(s)
Uhlig, H.
Kaiser, U.
Vogel, S.
Patent No
1992-4231778
Abstract
The invention relates to a process for the production of thin films made of hafnium (IV) oxide, in particular for an optical interference coating system by reactive vapour deposition on a sibstrate on a vacuum in a vacuum chamber. The invention is based on the task that the least technically possible quantity of water vapour is permitted to be vapour-deposited in the vacuum chamber at a reactive gas pressure of less than 0.02 Pa, that the substrate temperature is maintainted at greater than 200 <degrees>Celsius during vapour deposition and that the vapour deposition rate is maintained at smaller than 0.3 nm s->-1.