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  4. Verfahren zur Herstellung von duennen Schichten aus Hafniumdioxid
 
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Title

Verfahren zur Herstellung von duennen Schichten aus Hafniumdioxid

Date Issued
1993
Author(s)
Uhlig, H.
Kaiser, U.
Vogel, S.
Patent No
1992-4231778
Abstract
The invention relates to a process for the production of thin films made of hafnium (IV) oxide, in particular for an optical interference coating system by reactive vapour deposition on a sibstrate on a vacuum in a vacuum chamber. The invention is based on the task that the least technically possible quantity of water vapour is permitted to be vapour-deposited in the vacuum chamber at a reactive gas pressure of less than 0.02 Pa, that the substrate temperature is maintainted at greater than 200 <degrees>Celsius during vapour deposition and that the vapour deposition rate is maintained at smaller than 0.3 nm s->-1.
Language
Deutsch
Institute
IOF
Link
http://worldwide.espacenet.com/publicationDetails/biblio?DB=worldwide.espacenet.com&locale=en_EP&FT=D&CC=DE&NR=4231778A
Patenprio
DE 1992-4231778 A: 19920923
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