Technology of GaN-Based Large Area CAVETs with Co-Integrated HEMTs

In this work, multi-finger current aperture vertical electron transistors (CAVETs) are fabricated with co-integrated high electron mobility transistors (HEMTs). The devices are realized by Mg-ion implantation and metalorganic chemical vapor deposition (MOCVD) regrowth. The intrinsic CAVET design is optimized for robust device performance and applied on multi-finger devices having a total gate periphery of WG = 13.5 mm and WG = 77 mm. Mappings of the transfer characteristics revealed reliable turn-off behavior demonstrating the suitability of the intrinsic device layout. The largest CAVETs revealed a total on-state resistance of Ron = 1.67 O and a maximum drain current of ID,MAX = 20.3 A at VGS = 3 V. A pulse robustness of PPULS = 976 W at VDS = 50 V and a pulsewidth of 500 ms is shown without thermal destruction. Additionally, HEMTs are co-integrated on-chip. This combination of HEMTs and reliable large area CAVETs enables the design of high-performance, monolithically integrated GaN power circuits (GaN power ICs) based on the CAVET technology.