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  4. RF-Characterization of HZO Thin Film Varactors
 
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2021
Zeitschriftenaufsatz
Titel

RF-Characterization of HZO Thin Film Varactors

Abstract
A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz. Ferroelectric Hf0.5Zr0.5O2 of 10 nm thickness has demonstrated a stable permittivity switching in the whole frequency range. A constant increase of the calculated dielectric loss is observed, which is shown to be an effect of electric field distribution on highly resistive titanium nitride (TiN) thin film electrodes. The C-V characteristics of a ""butterfly"" shape was also extracted, where the varactors exhibited a reduction of capacitance tunability from 18.6% at 10 MHz to 15.4% at 500 MHz.
Author(s)
Abdulazhanov, S.
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Le, Q.H.
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Huynh, D.K.
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Wang, D.
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Lederer, M.
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Olivo, R.
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Mertens, K.
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Emara, J.
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Kämpfe, T.
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Gerlach, G.
Zeitschrift
Crystals
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DOI
10.3390/cryst11080980
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