Passivated, Highly Reflecting, Laser Contacted Ge Rear Side for III-V Multi-Junction Solar Cells

This article describes the successful integration of a passivated, highly reflecting Ge rear side into a III-V multijunction solar cell. The use of lowly doped Ge and the new rear side leads to the aimed increase in Ge cell current up to 1.6 mA.cm −2 , demonstrated by external quantum efficiency and I-V measurements. For the contact formation, two different types of laser processes were conducted and evaluated-the laser fired contact route and the PassDop route. In both cases, the formation of a local back surface field preserves the passivation of the contact points. A laser pitch and laser power variation leads to a good performing back contact. The passivation effect is proven experimentally and is qualitatively accessed with cell simulations.