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  4. Passivated, Highly Reflecting, Laser Contacted Ge Rear Side for III-V Multi-Junction Solar Cells
 
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2021
Journal Article
Titel

Passivated, Highly Reflecting, Laser Contacted Ge Rear Side for III-V Multi-Junction Solar Cells

Abstract
This article describes the successful integration of a passivated, highly reflecting Ge rear side into a III-V multijunction solar cell. The use of lowly doped Ge and the new rear side leads to the aimed increase in Ge cell current up to 1.6 mA.cm (exp -2), demonstrated by external quantum efficiency and I-V measurements. For the contact formation, two different types of laser processes were conducted and evaluated-the laser fired contact route and the PassDop route. In both cases, the formation of a local back surface field preserves the passivation of the contact points. A laser pitch and laser power variation leads to a good performing back contact. The passivation effect is proven experimentally and is qualitatively accessed with cell simulations.
Author(s)
Weiss, C.
Schön, J.
Höhn, O.
Fuhrmann, B.
Dimroth, F.
Janz, S.
Zeitschrift
IEEE Journal of Photovoltaics
DOI
10.1109/JPHOTOV.2021.3087727
File(s)
N-640768.pdf (1.09 MB)
Language
English
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Fraunhofer-Institut für Solare Energiesysteme ISE
Tags
  • Photovoltaik

  • germanium

  • III-V solar cells

  • laser contacts

  • passivation

  • Silicium-Photovoltaik

  • III-V- und Konzentrator-Photovoltaik

  • Epitaxie

  • Si-Folien und SiC-Abscheidungen

  • Oberflächen: Konditionierung

  • Passivierung

  • Lichteinfang

  • III-V Epitaxie und Solarzellen

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