• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Nitrogen and carbon incorporation in GaNxAs1-x grown in a showerhead MOVPE reactor
 
  • Details
  • Full
Options
2021
Journal Article
Title

Nitrogen and carbon incorporation in GaNxAs1-x grown in a showerhead MOVPE reactor

Abstract
The growth of dilute nitrides with metal organic chemical vapor phase epitaxy (MOVPE) presents two major challenges: a low N-incorporation combined with a high impurity density of carbon and hydrogen. For the device implementation the full understanding of the growth of the metastable material and the influence of the parameters on the impurity levels is of high interest. We investigated the N- and C-incorporation in GaNxAs1-x as a reference system in a close coupled showerhead MOVPE reactor to minimize gas-phase reactions for a wide range of growth parameters and precursors. The N-incorporation was always proportional to the N/As-ratio, while the absolute N-molar-flow, growth rate and interaction time show only a minor influence, indicating little gas-phase pre-reactions. Pyrolysis and pre-reactions between radicals on the surface have been taken into account according to the used precursor combination. We identified the group-III-methyl-groups as the major C-source and found a linear correlation between the incorporated N and C. GaN0.01As0.99 could be grown with C-background below 1016 atoms/cm3 for optimized conditions.
Author(s)
Ruiz, J.E.
Lackner, David  
Souza, P.L.
Dimroth, Frank  
Ohlmann, Jens  
Journal
Journal of Crystal Growth  
DOI
10.1016/j.jcrysgro.2020.125998
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024