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  4. Growth defects in heteroepitaxial diamond
 
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2021
Zeitschriftenaufsatz
Titel

Growth defects in heteroepitaxial diamond

Abstract
In focus of this report are the mechanisms of formation, propagation, and interaction of growth defects in heteroepitaxial diamond films along with their impact on the optical emission properties of N- and Si-vacancy (NV and SiV) color centers. Here, we analyze and discuss the properties of incoherent grain boundaries (IGBs) and extended defects in a nitrogen- and boron-doped heterodiamond nucleated and grown on Ir(001) via bias-enhanced nucleation and chemical vapor deposition techniques. We show that the low-angle IGBs alter the structural and optical emission properties of NV and SiV complexes by subduing NV emission and supporting the formation of interstitial Si-vacancy complexes dominating in the faulted IGB regions. We also demonstrate that the IGB-confined threading dislocations are responsible for the vertical transport and incorporation of Si impurities in thick layers, leading to an enhanced SiV emission from the IGBs.
Author(s)
Lebedev, Vadim
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Engels, Jan
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Kustermann, Jan
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Weippert, Jürgen orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Cimalla, Volker
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Kirste, Lutz
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Giese, Christian
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Quellmalz, Patricia orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Graff, Andreas
Meyer, Frank
Höfer, Markus
Sittinger, Volker
Zeitschrift
Journal of applied physics
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DOI
10.1063/5.0045644
Language
Englisch
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