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  4. Two-Terminal direct Wafer bonded GaInP/AlGaAs//Si Triple-Junction Solar Cell with AM1.5g Efficiency of 34.1 %
 
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2020
Journal Article
Title

Two-Terminal direct Wafer bonded GaInP/AlGaAs//Si Triple-Junction Solar Cell with AM1.5g Efficiency of 34.1 %

Abstract
The terrestrial photovoltaic market is dominated by single‐junction silicon solar cell technology. However, there is a fundamental efficiency limit at 29.4%. This is overcome by multijunction devices. Recently, a GaInP/GaAs//Si wafer‐bonded triple‐junction two‐terminal device is presented with a 33.3% (AM1.5g) efficiency. Herein, it is analyzed how this device is improved to reach a conversion efficiency of 34.1%. By improving the current matching, an efficiency of 35% (two terminals, AM1.5g) is expected.
Author(s)
Lackner, David  
Höhn, Oliver  
Müller, Ralph  
Beutel, Paul  
Schygulla, Patrick  
Hauser, Hubert  
Predan, Felix  
Siefer, Gerald  
Schachtner, Michael  
Schön, Jonas  
Benick, Jan  
Hermle, Martin  
Dimroth, Frank  
Journal
Solar RRL  
Open Access
File(s)
Download (422.09 KB)
Rights
CC BY-NC 4.0: Creative Commons Attribution-NonCommercial
DOI
10.24406/publica-r-263904
10.1002/solr.202000210
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Photovoltaik

  • Silicium-Photovoltaik

  • III-V und Konzentrator-Photovoltaik

  • Herstellung und Analyse von hocheffizienten Si-Solarzellen

  • III-V Epitaxie und Solarzellen

  • solar cell

  • MOVPE

  • wafer bonding

  • multi junction solar cell

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