MOVPE Growth of GaAs with Growth Rates up to 280 µm/h

Manufacturing of III-V devices is a well-established technique but there is a strong demand to decrease production costs. MOVPE, as an industrial scale production method, suffers from long process times and high precursor costs. In this work, we focus on increasing the throughput of a close-coupled showerhead MOVPE reactor through higher growth rates, while simultaneously achieving higher precursor incorporation efficiencies. We demonstrate how reactor conditions influence the growth rate by comparing experimental results to predictions from theoretical modelling and reach growth rates up to 280 µm/h with 60% TMGa precursor efficiency. Furthermore, we investigate how the growth rate is influenced by growth temperature and reactor pressure, and how it in turn influences the GaAs surface roughness and growth rate uniformity. At a growth rate of 100 µm/h, a Hall carrier concentration as low as +2.4⋅1014 cm−3 was achieved.