Quantitative detection of anodic oxygen evolution on solid state sintered silicon carbide under near ECM conditions

The present work examined the gas evolution on a solid-state sintered silicon carbide material (EKasic®D) at high anodic potentials (up to 120 V vs Ag/AgCl). By using the amperometric detection as well as the method of oxygen quenching the part of anodic evolved oxygen could be determined for 75-95% of the total amount of consumed charge. The minor part of the total charge is consumed by oxide film formation (passive range) or material dissolution (transpassive range).