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  4. Optimization of metal-organic chemical vapor deposition regrown n-GaN
 
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2020
Journal Article
Titel

Optimization of metal-organic chemical vapor deposition regrown n-GaN

Alternative
Optimization of MOCVD Regrown n-GaN
Abstract
GaN devices for high-frequency and high-power applications often need n-doped GaN layers on top of their structures. Such layers can be either grown in an epitaxial reactor or formed by implantation or annealing of Si-containing layers (e.g., a SiO2 mask). These processes are typically performed at high temperatures, which generate the undesired effect of atom diffusion between the different epitaxial layers; consequently, the electrical performance of the final device will be hampered. Herein, an optimized epitaxial growth process of n-GaN layers is developed with the focus on minimizing the atom diffusion process, while preserving a high material quality and excellent electrical characteristics, such as very low contact resistance for n-GaN ohmic contacts or high electron mobility in GaN npin structures. A low growth temperature process combined with improved growth conditions to minimize the incorporation of impurities is successfully optimized and demonstrated on different epitaxial reactors.
Author(s)
Leone, Stefano
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Brueckner, Peter
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Kirste, Lutz
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Doering, Philipp
INATECH
Fuchs, Theodor
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Müller, Stefan
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Prescher, Mario
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Quay, Rüdiger orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Ambacher, Oliver
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Zeitschrift
Physica status solidi. B
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DOI
10.1002/pssb.201900436
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Language
English
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