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  4. P-Type Silicon Solar Cells with Passivating Rear Contact Formed by LPCVD p+ Polysilicon and Screen Printed Ag Metallization
 
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2019
Journal Article
Title

P-Type Silicon Solar Cells with Passivating Rear Contact Formed by LPCVD p+ Polysilicon and Screen Printed Ag Metallization

Abstract
The work shows a process flow for the fabrication of bifacial 244 cm2 large p‐type solar cells with a passivating rear contact formed by low pressure chemical vapor deposition of an in‐situ boron doped polysilicon layer. Contacting of both polarities is achieved by screen printing of a silver paste and contact firing. Contact resistance values are shown to heavily depend on firing set temperatures. In a first experiment, conversion efficiencies up to 20.4% are demonstrated.
Author(s)
Mack, Sebastian  
Lenes, Martijn
Luchies, Jan-Marc
Wolf, Andreas  
Journal
Physica status solidi. Rapid research letters  
DOI
10.1002/pssr.201900064
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Photovoltaik

  • Silicium-Photovoltaik

  • Oberflächen: Konditionierung

  • Passivierung

  • Lichteinfang

  • Kontaktierung und Strukturierung

  • Pilotherstellung von industrienahen Solarzellen

  • TOPCon

  • contacts

  • LPCVD

  • polysilicon

  • printing

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