On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics

For the realization of high breakdown voltages in power electronics, a low-cost technology was developed which allows the deep diffusion of aluminum from a physically deposited source. The approach requires only standard process steps already established in the manufacturing of silicon power devices. The sheet concentration of the diffusion profiles realized exceeds with 8E13 cm-2 the ones of comparable implanted and annealed profiles by up to a factor of two. A full numerical analysis of the resulting profiles is provided.